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Compound Wafer
GaN (Gallium Nitride)
High frequency characteristics, up to 300 GHz
High temperature characteristics, operating at 300°C (very suitable for aerospace, military and other high temperature environments)
High saturation velocity of electron drift, small dielectric constant and good thermal conductivity
Product Detail
  GaN/ Al2O3 Substrates (4")  
Item  Un-doped N-type High-doped N-type
Size  (mm) Φ100.0±0.5 (4")
Substrate Structure GaN on Sapphire(0001)
SurfaceFinished  (Standard: SSP Option: DSP)
Thickness (μm) 4.5±0.5; 20±2;Customized
Conduction Type  Un-doped N-type High-doped N-type
Resistivity  (Ω·cm）(300K) ≤0.5 ≤0.05 ≤0.01
GaN Thickness Uniformity ≤±10% (4")
Dislocation Density (cm-2) ≤5×108
Useable Surface Area ＞90%
Package  Packaged in a class 100 clean room environment.


 
Gallium Nitride (GaN)
It was synthesized in 1928. Chemically stable.
The stable structure is wurtzite structure with high bond energy, hardness, high melting point (approx. 1700°C), small lattice constant and high ionization degree, which is the highest among the ii-v group compounds (0.5 or 0.43).

Continuous variation of group III n-compound band gap from 0.7eV(InN), 3.4eV(GaN) to 6.2eV(AlN)
Undoped is n-type semiconductor; Mg doping is a p-type semiconductor

For GaN materials, the heteroepitaxy defect density is quite high because the substrate single crystal has not been solved for a long time, but the device level has been practical.
High frequency characteristics, up to 300 GHz
High temperature characteristics, operating at 300°C (very suitable for aerospace, military and other high temperature environments)
High saturation velocity of electron drift, small dielectric constant and good thermal conductivity
 
Acid, alkali, corrosion resistance (can be used in harsh environment)
High voltage characteristics (impact resistance, high reliability)
High power (very desirable for communications equipment)


1. Light-emitting diode LED
A light-emitting Diode is made from several thin layers of doped semiconductor material.
When a positive current is passed, the energy gained by the electrons in the n-block is released in the form of light by the combination of the charged space of the PN junction and the holes in the p-block.

2. LED application:
Semiconductor white light illumination
Interior lighting
Traffic light
chandeliers
Large screen full color display system
Solar lighting system
Other lighting areas
Ultraviolet and blue laser
High-capacity blu-ray DVD, laser printing and display, military field, etc

3. LED lighting is a little bit
High luminous efficiency, energy saving
Low voltage, low current
The power consumption is the same brightness incandescent lamp 10%-20%, the fluorescent lamp 1/2.
 
Green environmental protection
Cold light source, not easily broken, no electromagnetic interference, less waste
Long life, up to 100,000 hours
Solid light source, small size, light weight, good direction
The size of a single unit is only 3-5mm
Quick response, and can withstand all kinds of harsh conditions

Characteristics of 3.

1. Realize semiconductor lighting.
The new type of high efficiency, energy saving and environmental protection light source will replace most of the traditional light source currently used, which is called the revolution of lighting source in the 21st century.

2. Improve optical storage density.
DVD optical storage density and as reading and writing device is inversely proportional to the square of the wavelength of semiconductor laser, if use DVD GaN short wavelength semiconductor laser, and its optical storage density will compared to the current use of GaAs semiconductor laser products 4 to 5 times, therefore, wide bandgap semiconductor technology will also become the mainstream of optical storage and processing technology.

3. Improve the performance of military systems and equipment.
High temperature, high frequency, high power microwave device of radar, communication, and other areas of the military is an urgent need to electronics, if the use of microwave power tube improve an order of magnitude, the output power density of microwave devices working temperature will be raised to 300 ° C, will not only greatly improve the radar (especially in phased array radar), communications, electronic resistance and intelligent weapons and other military systems and equipment performance, and will address space and aviation electronic case and civil mobile communication system, a series of problems.
 
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