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Silicon Wafer
FZ Wafer
Float Zone Silicon
 
The Float Zone (FZ) Method produces a highly pure form of silicon.
 
The purity of the material allows for lower defect concentrations and higher resistivity levels and it is useful in high-power devices, detectors and solar applications.
 
 
Product Detail
Diameter 2"  3"  4"  5"  6"  8" 
Growth Method FZ
Orientation  < 1-0-0 > , < 1-1-1 > 
Type/Dopant Intrinsic, N Type/Phos, P Type/Boron
Thickness (um) 279 380 525 625 675 725
Thickness Tolerance Standard ± 25um ±50um
Resistivity(Ω•cm) 1000-20000, Maximum Capabilities>20000, and 1-5
Surface Finished P/E , P/P, E/E, G/G
TTV (um) Standard < 10 um
Bow/Warp  (um) Standard <40 um <50um
Particle <10@0.3um

Float Zone Silicon
 
The Float Zone (FZ) Method produces a highly pure form of silicon.
 
The purity of the material allows for lower defect concentrations and higher resistivity levels and it is useful in high-power devices, detectors and solar applications.
 
PLUTO offers the very best Float Zone material commercially available, not made from CZ re- melts but from high-quality polysilicon, thus allowing for resistivity’s in excess of 10k ohm–cm.
 
 
PLUTO is the exclusive China distributor, bringing world-class Float Zone silicon to the world market since 2010.
 
Available in various specifications and Diameters up to 200mm.
 
Neutron Transmutation Doped (NTD) Float Zone silicon:
The lowest resistivity variation of any crystalline silicon product on the market. NTD silicon products in the widest range of resistivities ranging from 5 Ω•cm to 4000 Ω•cm.
 
Sub 1: PlutoChip Co., Ltd    -Discrete Devices and Integrated Circuits-    www.plutochip.com
Sub 2: PlutoSilica Co., Ltd   -Silicon Wafer and Glass Wafer Manufactory-
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