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Metal Organic Chemical Vapor Deposition System (GaN-based MOCVD)
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Metal Organic Chemical Vapor Deposition System (GaN-based MOCVD)  

Model: CCS3X2"FT/GAN  
Manufacturer: THOMASSWAN, UK  
Main Function: Epitaxial preparation of GaN-based III-V compound semiconductor microstructure materials with different combinations of Ga, In, Al, and N  
Technical Specifications: Source Materials: TMGa, TMAl, TMIn, Cp2Mg, SiH4/H2, NH3  
Reaction Chamber Volume: 6 × 2"
 
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