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Metal Organic Chemical Vapor Deposition System (As/P Based MOCVD)
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Metal Organic Chemical Vapor Deposition System (As/P Based MOCVD)  

Model: CCS3X2"FT/INP  
Manufacturer: THOMASSWAN, UK  
Main Function: Epitaxial preparation of GaAs-based and InP-based III-V compound semiconductor microstructure materials with different combinations of Ga, In, Al, As, and P  
Technical Specifications: Source Materials: TMGa, TMAl, TMIn, DMZn, CCl4, SiH4/H2, AsH3, PH3
 
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