TEOS LPCVD (Tetraethyl Orthosilicate Low Pressure Chemical Vapor Deposition System)
Model: TYTAN 3600
Manufacturer: TYSTAR
Main Functions: Deposition of Silicon Dioxide & Annealing
Technical Specifications:
Process Tube 1: Deposition of SiO2
• Substrate Size: ≤6 inches
• Process Temperature Range: 650~750℃
• Furnace Tube Temperature Control Accuracy: ≤±0.5℃
• ≤50 wafers per furnace
• Coating Uniformity: Within-wafer non-uniformity <5%, between-wafer non-uniformity <5%, batch-to-batch non-uniformity <5%
Process Tube 2: High-Temperature Annealing
• Substrate Size: ≤6 inches
• Annealing Temperature Range: 500~1250℃
• Furnace Tube Temperature Control Accuracy: ≤±0.5℃
• ≤100 wafers per furnace
