Molecular Beam Epitaxy System (MBE)
Model: EVO-50 Si-Ge MBE System
Manufacturer: Omicron NanoTechnology GmbH, Germany
Main Function: Epitaxial growth and doping control of germanium-silicon materials (Si, Ge, P, B)
Technical Specifications: Applicable wafer size: 3-inch wafers / 1.4 × 1.4cm² fragments; epitaxial growth vacuum level: 10⁻⁹ mbar; substrate temperature range: room temperature - 1200℃; growth rate resolution: 0.1Å/s.
