Inductively Coupled Plasma Etching Machine
Model: PlasmaPro Cobra 300
Manufacturer: Oxford Instruments Plasma Technology, UK
Main Function: Etching of III-V compound semiconductors, such as InP, GaAs, GaN, AlN, GaP, etc.
Technical Specifications: Maximum sample support of 8 inches. Existing pressure ring for 4 inches.
Gas types and maximum flow rates (sccm): Ar: 100, O2: 20, O2: 200, SF6: 100,
CHF3: 100, CF4: 100, N2: 100, H2: 100, CH4: 100, Cl2: 100, BCl3: 100.
RF power 600W (13.56MHz), ICP power 3000W (2MHz).
Equipped with ALE atomic layer etching function. Temperature range -20℃ to 400℃.
