Lithium Niobate Etching Machine
Model: NLD-570
Manufacturer: ULVAC, Japan
Main Function: Etching of lithium niobate and shallow silicon.
Technical Specifications: Maximum sample support of 8 inches, compatible with small pieces.
Gas Types: O2, CHF3, Ar, C4F8, SF6, N2
Lithium Niobate (LiNbO3) etching (100mm wafer, Si substrate, 500nm ridge waveguide): Etching depth ≤ 500nm; Etching rate > 30nm/min; Sidewall angle > 70°
In-wafer uniformity <±5%; Inter-wafer repeatability <±3%; Sidewall roughness increase < 5nm
Selectivity to Cr or Ni > 3:1; Silicon (Si) etching (100mm wafer, SOI substrate): Etching depth ≤ 220nm; Etching rate < 360nm/min; Sidewall angle > 90±1°
Selectivity to PR > 1.5:1; In-wafer uniformity <±5%; Inter-wafer repeatability <±3%; Sidewall roughness increase < 5nm
