Reactive Ion Etching Machine
Model: SI 591
Manufacturer: SENTECH, Germany
Main Function: Reactive ion etching of InP, SiO2, Si3N4, etc.
Technical Specifications: Maximum sample support of 8 inches, compatible with small pieces. Gas Types: O2, CHF3, Ar, H2, CH4, Cl2
RF Power: 600W (13.56MHz); Temperature Range: -20℃~80℃.
(1) SiO2 Etching: Etching rate: ≥20 nm/min; In-wafer uniformity: ≤±5% (4 inches); Inter-wafer repeatability: ≤±3%; Sidewall angle: >70°; Selectivity: ≥2.5:1 (SiO2:PR)
(2) InP Etching: Etching rate: ≥30 nm/min; In-wafer uniformity: ≤±3% (2 inches); Inter-wafer repeatability: ≤±3%; Sidewall angle: >70°; Selectivity: ≥3:1 (InP:PR)
