Ion Implantation Services
Process introduction
Ion implantation, gas source doping, and solid source doping are the main methods used to manufacture doped silicon in semiconductor devices.
Technical application
Metal finishing and materials science research.
Process capability
Injection materials: B, P, F, Al, N, Ar, Mg, Si and other elements
Injection angle: ±11°
Wafer size: compatible with 6 inches or less
Supporting processes: High‑temperature oxidation, high‑temperature diffusion, rapid annealing
