Silicon-based Micro-nano Process
● Photolithography System: Nikoni9 stepper (line width ≤ 500nm), Vistec EBPG electron beam lithography (≤ 10nm)
● Etching Equipment: Oxford Instruments plasma etcher (deep silicon etching aspect ratio > 20:1)
● Thin Film Equipment: OIPT PECVD (film uniformity within ±3%), Tystar LPCVD (TEOS SiO2/Si3N4 dielectric layer/polycrystalline silicon)
● Characterization Instruments: SEM, step profiler, ellipsometer
