SiC - SiC - PlutoSemi Co., Ltd.

Foundry

Position： Home > Foundry > Process Nod-100nm > SiC

SiC

Download PDF

Product Detail

Grade			Zero MPD	Production	Research Grade		Dummy Grade
	Diameter		100.0 mm±0.5 mm
	Thickness	4H-N	350 μm±25μm
		4H-SI	500 μm±25μm
	Wafer Orientation		Off axis : 4.0° toward < 1120 >±0.5° for 4H-N			On axis : <0001>±0.5° for 4H-SI
	Micropipe Density		≤1 cm^-2	≤5 cm^-2	≤15 cm^-2		≤50 cm^-2
	Resistivity	4H-N	0.015~0.028 Ω·cm
		4H-SI	≥1E5 Ω·cm
	Primary Flat		{10-10}±5.0°
Primary FlatLength			32.5 mm±2.0 mm
Secondary FlatLength			18.0mm±2.0 mm
Secondary FlatOrientation			Silicon face up: 90° CW. from Prime flat ±5.0°
	Edge exclusion		3 mm
TTV/Bow /Warp			≤15μm /≤25μm /≤40μm
	Roughness		Polish Ra≤1 nm
			CMP Ra≤0.5 nm
Cracks by high intensity light			None		1 allowed, ≤2 mm		Cumulative length≤10mm, single length≤2mm
Hex Plates by high intensitylight			Cumulative area ≤1%		Cumulative area ≤1%		Cumulative area ≤3%
Polytype Areas by high intensity light			None		Cumulative area ≤2%		Cumulative area ≤5%
Scratches by high intensity light			3 scratches to 1×wafer diameter cumulative length		5 scratches to 1×wafer diameter cumulative length		5 scratches to 1×wafer diameter cumulative length
Edge chip			None		3 allowed, ≤0.5 mm each		5 allowed, ≤1 mm each
Contamination by high intensity light			None

Grade			Zero MPD	Production Grade	Research Grade		Dummy Grade
	Diameter		150.0 mm±0.25mm
	Thickness	4H-N	350 μm±25μm
		4H-SI	500 μm±25μm
	Wafer Orientation		Off axis : 4.0° toward < 1120 >±0.5° for 4H-N			On axis : <0001>±0.5° for 4H-SI
	Primary Flat		{10-10}±5.0°
Primary Flat Length			47.5 mm±2.5 mm
	Edge exclusion		3 mm
TTV/Bow /Warp			≤15μm /≤40μm /≤60μm
	Micropipe Density		≤1 cm^-2	≤5 cm^-2	≤15 cm^-2		≤50 cm^-2
	Resistivity	4H-N	0.015~0.028 Ω·cm
		4H-SI	≥1E5 Ω·cm
	Roughness		Polish Ra≤1 nm
			CMP Ra≤0.5 nm
Cracks by high intensity light			None		1 allowed, ≤2 mm		Cumulative length≤10mm, single length≤2mm
Hex Plates by high intensitylight			Cumulative area ≤1%		Cumulative area ≤2%		Cumulative area ≤5%
Polytype Areas by high intensity light			None		Cumulative area≤2%		Cumulative area≤5%
Scratches by high intensity light			3 scratches to 1×wafer diameter cumulative length		5 scratches to 1×wafer diameter cumulative length		5 scratches to 1×wafer diameter cumulative length
Edge chip			None		3 allowed, ≤0.5 mm each		5 allowed, ≤1 mm each
Contamination by high intensity light			None

PlutoSemi Co., Ltd.
Leading Supplier of Semiconductor Material Solutions

Sub 1: PlutoChip Co., Ltd -Discrete Devices and Integrated Circuits- www.plutochip.com

Sub 2: PlutoSilica Co., Ltd -Silicon Wafer and Glass Wafer Manufactory-