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Silicon-Based Micro/Nano Process Line — Build Your Devices, Not Your Fab
Silicon-Based Micro/Nano Process Line — Build Your Devices, Not Your Fab
MEMS accelerometers, SOI optical modulators, AR/VR masters, RF filters… What do they all have in common?
They all need a stable, flexible, and well-equipped silicon-based micro/nano processing line to go from design to reality.
The Old Way: Build Your Own Fab → Expensive Slow Inflexible
Our Way: A Modular “Building Block” Process Line — lithography, etching, deposition, bonding… combine them as you need, build your devices faster. [word_6]
What We Offer
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Small-Batch Trial Production — IoT chips, RF devices, process optimization. Fast validation, low R&D threshold.
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Failure Analysis — SEM/FIB precision defect localization. Identify process anomalies and improve yield.
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Full Turnkey OEM — From design to tape-out. One-stop foundry, no need to build your own fab.
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SOI MPW Tape-Out — Silicon photonics, MEMS, passive structures. Shared wafer, shorter cycle, lower cost.
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Core Equipment at a Glance
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Process
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Equipment
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Key Spec
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Lithography
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Nikon i9 Stepper + Vistec EBPG EBL
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≤500nm / ≤10nm
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Etching
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Oxford Plasma Etcher
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Deep Si >20:1 aspect ratio
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Thin Film Deposition
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OIPT PECVD (±3%) + Tystar LPCVD
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SiO₂ / Si₃N₄ / Poly-Si
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Characterization
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SEM, Profilometer, Ellipsometer
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Full-process monitoring
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A Typical Flow: SOI → Traveling-Wave Electrodes
Taking the silicon photonic modulator as an example — here’s how we build it on our SOI platform in 7 steps :
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Prepare SOI Substrate — Si / SiO₂ / Si-sub, foundation for optical waveguides
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Define PN Junction — n⁺/n/p/p⁺ doping for carrier-depletion phase modulation
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Ohmic Contact Electrodes — Reduce contact resistance for high-frequency signal injection
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Etch Waveguides — High-aspect-ratio etching defines single-mode waveguides
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Deposit Passivation Layer — PECVD uniform film protects active regions
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Open Electrode Windows — Lithography + etching for contact access
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Thicken Traveling-Wave Electrodes — Reduce microwave loss, boost modulation bandwidth
The result: a lateral PIN structure enabling optical phase modulation and high-speed electro-optic response.
Why Work With Us?
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High Precision — EBL down to ≤10nm, meeting cutting-edge R&D needs
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Flexible — 8-inch and below, wafers and offcuts, all welcome
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Full-Process Coverage — Lithography, etching, deposition, bonding, and testing
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Proven Experience — From design consultation to volume production
Whether you’re a university lab or an industry R&D team — let’s talk. Maybe we can save you a few detours
