Process introduction

TSV (Through-Silicon Via) technology, commonly known as silicon via technology, provides advanced interconnection for stacked chips in 3D integrated circuits. This solution enables:
Highest-density 3D chip stacking
Shortest possible inter-chip connections
Minimal form factors
Significant improvements in speed and power efficiency

Plutosemi implements cutting-edge TSV technology to address your unique requirements. Explore our TSV capabilities for your next-generation 3D IC projects.
 
Through-Silicon Via (TSV) is the cornerstone of modern 3D integrated circuits, enabling vertical integration of semiconductor dies for unprecedented performance. Plutosemi’s cutting-edge TSV processes deliver industry-leading solutions for high-density, power-efficient designs.
 
Deep Silicon Etching
Utilizes Bosch Process (DRIE) to create high-aspect-ratio vias (10:1 to 20:1) with near-vertical sidewalls.
Laser-drilling options for ultra-fine pitches (<10µm).


Dielectric & Barrier Layer Deposition
PECVD SiO₂/TaN Liners: Electrically isolates vias and prevents copper diffusion.
Conformal coatings ensure uniform coverage in high-AR structures.


Conductive Via Filling
Electrochemical Deposition (ECD): Void-free copper filling for optimal conductivity.
Tungsten/Silicon plug alternatives for specialized applications.


Wafer Thinning & Handling
Precision grinding/CMP to achieve ultra-thin wafers (25-100µm).
Temporary bonding/debonding on glass carriers to prevent fragility.


Hybrid Bonding Integration
Cu-Cu direct bonding at <200nm interconnect pitch.
Oxide fusion for hermetic seals and mechanical stability.


 
Thermal Management: Integrated µ-bumps + thermal vias prevent hotspots in stacked dies.
Signal Integrity: <50µm via lengths reduce latency by 95% vs. wire bonding.
Yield Optimization: In-situ metrology and automated defect inspection (AOI).
Heterogeneous Integration: Supports logic/memory/SiPh die stacking on interposers.


 
HBM Integration: 8-high DRAM stacks with 1TB/s bandwidth.
AI Accelerators: Near-memory computing architectures.
IoT Sensors: Ultra-compact form factors with integrated MEMS.
Partner with Plutosemi for TSV solutions featuring:
✅ <5µm via pitch capability | ✅ 99.9% via yield | ✅ Full turnkey 3D integration
Explore our Design-for-TSV (DFTSV) guidelines to accelerate your roadmap.