Stepper Lithography Machine | CANON FPA-3030EX6
Capabilities：
Advanced stepper lithography system delivering high-resolution patterning down to 150 nm minimum feature size. With exceptional 40 nm alignment accuracy and 5:1 mask reduction ratio, this system enables precision lithography for semiconductor devices, MEMS, and advanced micro/nano structures.
Technical Specifications：
Substrate size: 4/6 inch
Minimum linewidth: 150 nm
Mask reduction ratio: 5:1
Alignment accuracy: ≤40 nm
Focus accuracy: ≤100 nm
Stepping accuracy: ≤20 nm
Process Advantages：
High-resolution patterning capability down to 150 nm
Superior alignment precision ensures accurate layer-to-layer registration
5:1 mask reduction minimizes mask fabrication challenges
Excellent stepping accuracy enables large-area patterning
Primary Applications：
Semiconductor device manufacturing
MEMS and sensor fabrication
Advanced packaging processes
High-density interconnect patterning
Why Choose Our Service？
We provide high-resolution stepper lithography with 150 nm resolution and exceptional 40 nm alignment accuracy. Our 5:1 mask reduction technology and precise stepping control ensure reliable patterning for your most demanding semiconductor and MEMS applications. Partner with us to achieve superior lithography performance and accelerate your device development cycle.
