Plasma Enhanced Chemical Vapor Deposition System | SAMCO PD-220NL
Capabilities:
Advanced PECVD system designed for high-quality deposition of SiO₂, SiNₓ, and SiOₓN films with doping capability for B, P, and Ge elements. Ideal for semiconductor interlayer dielectrics, MEMS passivation, and optical coating applications.
Technical Specifications:
Liquid precursors: TEOS, TMP
Gaseous precursors: SiH₄, N₂O
Automated loadlock chamber
Maximum sample size: 8 inches
Lower electrode temperature control accuracy: ±1°C
Substrate heating temperature: 400°C
Process Advantages:
Excellent film uniformity through precise temperature control
Flexible doping capability for tailored electrical properties
Low-temperature processing protects sensitive substrates
High-density films with good step coverage
Primary Applications:
Interlayer dielectrics for semiconductor devices
Passivation layers for MEMS and sensors
Optical coatings and waveguides
Doped films for specialized device requirements
Why Choose Our Service?
We provide high-quality PECVD films with precise doping control and exceptional uniformity. Our system's automated handling and ±1°C temperature stability ensure reliable, reproducible results for your semiconductor and MEMS applications. Partner with us for advanced dielectric and doped film solutions that enhance your device performance.
