Inductively Coupled Plasma（ICP）Etching System | OXFORD PlasmaPro 100 Cobra
Capabilities：
Advanced ICP etching system delivering precision etching of diverse materials including Si, SiO₂, Si₃N₄, SiC, Al, Ti, TiN, Cr, InP, GaAs, GaN, and LiNbO₃. Optimized for semiconductor and compound semiconductor device fabrication with superior process control.
Technical Specifications：
Automated loadlock chamber
Backside helium cooling + water cooling
Up to 12 process gas channels
Chamber wall heating to 50°C
Maximum sample size: 6 inches
Lower electrode temperature: -20°C to 200°C
Process Advantages：
High-density plasma enables fast etch rates with low damage
Wide temperature range accommodates various process requirements
Multi-gas configuration supports complex etching chemistry
Heated chamber walls minimize byproduct accumulation
Primary Applications：
Silicon and silicon compound etching
Wide-bandgap semiconductor processing (SiC, GaN)
Compound semiconductor device fabrication (InP, GaAs)
Metal and dielectric etching for interconnects
Why Choose Our Service？
We provide precise etching solutions for a comprehensive range of materials using advanced ICP technology. Our system's flexible temperature control and multi-gas capability ensure optimal results for your most demanding semiconductor and compound semiconductor applications. Partner with us to achieve reliable, high-performance etching for your device fabrication needs.
