Ion Beam Etching System | Scia System Mill 150
Capabilities:
Precision micro/nano fabrication with exceptional material compatibility including Au, Pt, Cu, Ta, AlN, Si, and SiO₂. Our ion beam etching technology delivers both anisotropic and isotropic etching profiles for diverse structural requirements.
Technical Specifications:
RF ion source with stable energy control
Standard ion source neutralizer for charge accumulation suppression
Rotating wafer stage with precise temperature control
Dual cooling system: backside helium + water cooling
Automatic loadlock chamber for rapid sample loading
Supports samples up to 6 inches
Process Advantages:
Pure physical etching avoids chemical residue contamination
Independent parameter control (ion energy, beam current, incident angle)
Excellent etching uniformity through rotating stage and thermal management
Compatible with complex multilayer material structures
Primary Applications:
Microelectronic devices: RF MEMS/NEMS, magnetic storage electrodes
Optoelectronic components: optical waveguides, photonic crystals
Hard film processing: AIN piezoelectric devices, Ta refractory structures
Precision optics: DOE, microlens arrays
Nanomaterial research: nanowires, quantum dot devices
Why Choose Our Service?
We provide reliable ion beam etching solutions for Au, Pt, Cu, Ta, AIN, Si, and SiO₂ with exceptional process control and uniformity. Our automatic loadlock system and 6-inch capability ensure efficient prototyping and small-batch production. Partner with us to solve challenging etching requirements for complex material structures through our non-selective, low-damage physical etching technology.
