Deep Reactive Ion Etching System | SPTS Omega LPX Rapier
Capabilities:
A high-performance deep reactive ion etching system featuring dual plasma source design, specifically engineered for etching various silicon-based materials with exceptional aspect ratio capabilities. Ideal for advanced MEMS fabrication, through-silicon via (TSV) etching, and high-aspect-ratio structure creation in semiconductor devices.
Technical Specifications:
Dual plasma source configuration
Bias power supply with pulsing function
Thick dielectric coating electrostatic chuck
Cooling method: backside helium + water cooling
8-channel process gas system
Maximum sample size: 6 inches
Process Advantages:
Superior aspect ratio capability through dual plasma source technology
Precise profile control with pulsed bias power function
Stable temperature control via advanced chuck design and cooling system
Flexible process development with multi-gas configuration
Primary Applications:
MEMS device manufacturing
Through-silicon via (TSV) etching
High-aspect-ratio silicon structures
Advanced packaging applications
Why Choose Our Service?
We deliver high-aspect-ratio silicon etching with precision profile control using advanced dual plasma source technology. Our system's stable temperature management and flexible gas configuration ensure reliable, reproducible results for your most challenging MEMS and TSV applications. Partner with us to achieve optimal etching performance for your high-aspect-ratio structure requirements.
