Hydrogen Fluoride Vapor Etching System | Memsstar Orbis Alpha HF
Capabilities:
A specialized vapor-phase etching system designed for precise silicon dioxide sacrificial layer release in MEMS devices and SOI substrate processing. The system provides high-selectivity dry etching with complete process control and safety monitoring.
Technical Specifications:
Chamber PID temperature control
HF gas detection system
Maximum sample size: 8 inches
100% SiO₂ release without stiction
Suspended SiO₂ etch rate: >0.3 μm/min
Compatible materials: Al, Au, Ti, Si, Si₃N₄, and related materials
Process Advantages:
Vapor-phase etching eliminates liquid surface tension issues
High selectivity to silicon, silicon nitride, and metal layers
Stiction-free release preserves delicate microstructures
Precise temperature control ensures process reproducibility
Safe operation with integrated gas detection
Primary Applications:
MEMS sacrificial oxide layer release
SOI device fabrication
MEMS sensor and actuator manufacturing
Microstructure release and undercut processes
Why Choose Our Service?
We provide damage-free SiO₂ release etching with guaranteed stiction-free results for your most sensitive MEMS structures. Our vapor-phase process with >0.3 μm/min etch rates and full compatibility with common MEMS materials ensures reliable, high-yield device release. Partner with us to optimize your MEMS manufacturing with safe, controlled HF vapor etching solutions.
