Xenon Difluoride Etching System | Memsstar Orbis Alpha XeF2
Capabilities:
A specialized dry-phase isotropic etching system designed for silicon sacrificial layer release in MEMS devices. This system enables high-selectivity etching of silicon, germanium, and related alloys with exceptional process control and safety features.
Technical Specifications:
End-point detection system
Full system interlock safety features
Maximum sample size: 8 inches
100% silicon release without stiction
Cantilever polysilicon etch rate: >3 μm/min
Compatible materials: Si, Ge, GeSi, Mo, and related materials
Process Advantages:
True isotropic etching for uniform material removal
High selectivity to common structural and masking layers
Stiction-free release preserves delicate MEMS structures
Automated endpoint control ensures process repeatability
Primary Applications:
MEMS sacrificial layer release
Microstructure undercut patterning
Germanium and silicon-germanium device fabrication
MEMS sensor and actuator manufacturing
Why Choose Our XeF2 Etching Service?
We provide damage-free isotropic etching with guaranteed stiction-free release for your most delicate MEMS structures. Our automated endpoint control and >3 μm/min etch rates ensure efficient, reproducible results for silicon and germanium-based devices. Partner with us to accelerate your MEMS development and production with reliable, high-yield release etching solutions.
