Reactive Ion Etching System | SENTECH SI 591
Capabilities:
A high-precision reactive ion etching system designed for anisotropic etching of silicon, silicon dioxide, and silicon nitride. Optimized for semiconductor and MEMS manufacturing, it enables well-defined pattern transfer with excellent profile control and uniformity.
Technical Specifications:
Maximum Sample Size: 8 inches
RF Source Power: 600 W
Base Pressure: ≤1×10⁻³ Pa
Within-wafer Etch Uniformity: <5%
Etch Rate: SiO₂ >30 nm/min, Si₃N₄ >30 nm/min
6-Channel Gas System: CF₄, CHF₃, SF₆, C₄F₈, Ar, O₂
Process Advantages:
High anisotropy for vertical sidewall profiles
Superior uniformity ensures consistent feature definition
Flexible gas chemistry enables multi-material etching
Stable performance with automated process control
Primary Applications:
Semiconductor front-end and back-end etching
MEMS structure definition
Power device fabrication
Advanced packaging via etching
Why Choose Our Etching Service?
We deliver precise anisotropic etching of Si, SiO₂, and Si₃N₄ with guaranteed <5% uniformity and controlled etch rates. Our flexible gas system and proven process expertise ensure high-yield results for your semiconductor and MEMS applications. Partner with us to achieve reliable pattern transfer from R&D to production, supporting your most critical etching requirements.
