Ion Implantation System | Ulvac IMX-3500
Capabilities:
A precision ion implantation system engineered for accurate doping processes with B, P, and As elements. Designed to modify material properties with high dose control and uniformity, it supports advanced semiconductor manufacturing, MEMS fabrication, and R&D applications requiring reliable dopant integration.
Technical Specifications:
Maximum Wafer Size: 6 inches
Dose Accuracy: ≤1.5%
Mass Resolution: M/ΔM ≥ 80
Tilt Angle Options: 0°, 7°, or other customizable angles
Dose Range: 1×10¹¹ atoms/cm² to 1×10¹⁶ atoms/cm²
Process Advantages:
Exceptional dose control ensures reproducible electrical characteristics
High mass resolution minimizes unwanted species contamination
Flexible tilt angles enable optimized implantation profiles
Wide dose range supports applications from threshold adjustment to deep well formation
Primary Applications:
Semiconductor junction and well formation
MEMS device property modification
Power device doping processes
Research on advanced dopant integration schemes
Why Choose Our Service?
We deliver precise doping with B, P, and As elements using industry-proven implantation technology, guaranteeing ≤1.5% dose accuracy and high uniformity. Our flexible tilt configurations and wide dose range enable optimized device performance for your semiconductor and MEMS projects. Partner with us to achieve reliable, high-yield results for R&D and production, ensuring consistent dopant integration for your most critical fabrication steps.
