Rapid Thermal Annealing System | Annealsys AS-One 150HT
Capabilities:
Advanced rapid thermal processing system designed for defect annealing, dopant activation, silicide formation, and ohmic contact processing in silicon and compound semiconductors. Delivers precise thermal treatment with ultra-fast ramp rates for optimized device performance.
Technical Specifications:
Maximum wafer size: 150 mm
Maximum process temperature: 1300°C
Maximum heating rate: 150°C/s
Temperature uniformity: ±1%
Process gases: N₂, O₂, Ar
Ultimate vacuum: 4×10⁻² mbar
Process Advantages:
Ultra-fast heating minimizes thermal budget and dopant diffusion
Excellent temperature uniformity ensures consistent results across wafer
Versatile atmosphere control enables oxidation and annealing processes
Rapid thermal cycling increases throughput and process efficiency
Primary Applications:
Post-implantation annealing for silicon and compound semiconductors
Silicide formation for contacts and interconnects
Ohmic contact annealing for III-V devices
Dielectric film densification and stress modification
Why Choose Our Service?
We provide precise thermal processing with industry-leading temperature uniformity (±1%) and ultra-fast ramp rates up to 150°C/s. Our system's versatile atmosphere control and 1300°C capability ensure optimal results for your most demanding annealing applications. Partner with us to enhance device performance through controlled thermal treatment.
