A versatile LPCVD platform engineered for depositing high-quality thin films including thermal oxide, silicon nitride (SiN), silicon dioxide (SiO₂) via TEOS, and polysilicon (Poly-Si). Ideal for advanced semiconductor and MEMS manufacturing.
Furnace temperature control accuracy: ≤ ±0.5°C
Class 10 HEPA filtration system
Multiple process chamber configuration
Advanced gas delivery system
Excellent film uniformity and step coverage
Superior thickness control and repeatability
Low defect density and high film quality
Consistent batch-to-batch performance
Semiconductor device fabrication
MEMS sensor manufacturing
Power device production
Research and development applications
We provide high-quality thin films (SiN, SiO₂, Poly-Si, thermal oxide) with excellent uniformity and step coverage. Our advanced LPCVD technology ensures precise temperature control (±0.5°C) and low defect density for consistent, batch-to-batch performance. Trust us for versatile deposition solutions from R&D to pilot production, delivering reliable results for your semiconductor and MEMS manufacturing needs.
