An advanced ICPCVD system designed for high-performance deposition of superior dielectric films, including SiO₂, SiNₓ, and SiON, at low temperatures. Excellent for high-uniformity thin-film applications requiring precise control and reliable gap-filling performance.
Multi-layer Dielectric Deposition: SiO₂, SiH₄, SiON
Low-Temperature Processing: Protects sensitive substrates
Gap-Filling Capability: Ensives consistent coverage in complex structures
Maximum Sample Size: 8 inches
Deposition Uniformity: <5%
Ultimate Vacuum: ≤1×10⁻⁶ Pa
Deposition Rate: 215 nm/min
RF Source: ICP Power ≥1200 W, Bias Power 2300 W
6-Channel Process Gas System: SiH₄, NH₃, O₂, N₂, Ar, CF₄
Outstanding film uniformity and conformity
High deposition rate with exceptional thickness control
Low thermal budget, ideal for temperature-sensitive devices
Flexible gas configuration supports diverse film requirements
Semiconductor front-end and back-end processing
MEMS and sensor device fabrication
Advanced packaging and interlayer dielectric deposition
R&D and pilot production in microelectronics and optoelectronics
We specialize in high-performance dielectric films (SiO₂, SiH₄, SiON) with exceptional uniformity (<5%) and gap-filling capability. Our advanced ICP technology ensures low-temperature deposition for sensitive devices, high throughput, and flexible film customization. Trust us for reliable solutions from R&D to production, delivering consistent quality for your semiconductor and MEMS applications.
