Liquid Phase Epitaxy (LPE) System | CETC-48 M86150-3/UM
Capabilities:
A precision-engineered horizontal LPE system designed for growing high-quality crystalline films of silicon-based materials, YIG, III-V compounds, and LiNbO₃. Ideal for research and production in compound semiconductors, magneto-optics, and integrated optics.
Technical Specifications:
Horizontal furnace design with 800°C maximum temperature
Palladium-purified hydrogen atmosphere
Supports up to 2-inch wafers
±0.5°C temperature zone control
±0.05 mm boat positioning accuracy
Process Advantages:
Exceptional temperature stability enables reproducible film growth
Ultra-precise boat positioning ensures layer uniformity
Hydrogen purification maintains optimal process environment
Robust construction for reliable laboratory and pilot production
Primary Applications:
III-V semiconductor device fabrication
Magneto-optic film development (YIG)
Integrated optic component manufacturing
Advanced materials research
Why Choose Our Service？
We leverage precision liquid phase epitaxy technology to grow high-quality crystalline films of III-V compounds, YIG, and LiNbO₃. With exceptional temperature control (±0.5°C) and ultra-precise boat positioning (±0.05 mm), we ensure reproducible film growth with outstanding uniformity for your compound semiconductor, magneto-optic, and integrated optics applications. Our reliable LPE service accelerates your research and pilot production, delivering consistent results for demanding epitaxial growth projects.
