Film Thickness Measurement System | KLA F54-UV System
Capabilities:
The KLA F54-UV film thickness measurement system provides accurate, non-contact thickness measurement for photoresist, oxide, nitride, silicon, and other semiconductor film layers. Designed for precision metrology in semiconductor manufacturing and research environments.
Technical Specifications:
Light Source: Halogen lamp + Gas lamp
Key Function: 3D imaging capability
Wavelength Range: 190–1100 nm
Measurement Range: 4 nm – 30 μm
Spot Size: 17 μm / 1.5 mm
Accuracy: 0.02 nm
Measurement Repeatability: ≤ 0.05 nm
Process Advantages:
High accuracy ensures reliable process control
Broad measurement range covers diverse film types
Dual spot size options enhance measurement flexibility
3D imaging capability enables detailed film topography analysis
Primary Applications:
Thickness measurement of photoresist, oxide, nitride, silicon, and other semiconductor film layers in semiconductor manufacturing and research applications.
Why Choose Our Service?
Our expertise in thin film metrology delivers precise, repeatable thickness measurements critical for your semiconductor processes. Using the KLA F54-UV system, we provide accurate data and detailed 3D film analysis—supporting your quality control, process development, and yield improvement initiatives with reliable measurement solutions tailored to your specific film measurement needs.
