Film Stress Measurement System | TOHO FLX-2320-R System
Capabilities:
Our advanced film stress measurement system is specialized for thin film stress characterization, enabling precise detection of subtle stress variations in thin films deposited on wafers.
Technical Specifications:
Stress Measurement Accuracy: ≤ 2.5%
Wafer Size Compatibility: 2-inch, 4-inch, and 6-inch wafers
Minimum Scan Step: 0.02 mm
Stress Measurement Repeatability: ≤ 1 MPa
Laser Sources: Dual-wavelength, 670 nm and 780 nm
Stress Measurement Range: 1 MPa – 4 GPa
Process Advantages:
High measurement accuracy ensures reliable stress characterization
Excellent repeatability delivers consistent, trustworthy results
Broad stress measurement range accommodates diverse film types and thicknesses
Dual laser wavelengths enable optimized measurement for various film properties
Fine scan step resolution captures detailed stress distribution profiles
Multi-wafer size compatibility supports flexible production requirements
Primary Applications:
Specialized thin film stress measurement and precise detection of subtle stress variations in semiconductor manufacturing, thin film metrology, and materials research applications
Why Choose Our Service?
Partner with us for precision film stress measurement solutions that deliver the accuracy, repeatability, and sensitivity your process control and materials characterization demand. Using the TOHO FLX-2320-R system, we provide reliable stress measurements, high-resolution stress mapping, and expert technical support—helping you monitor film stress, optimize deposition processes, and improve device reliability with measurement solutions tailored to your specific wafer and thin film requirements.
