Deep Via Metallization System | SPTS sigma
Capabilities:
Our advanced deep via metallization system enables magnetron-sputtered metal ions and atomic clusters to coat high aspect ratio deep vias through its tall chamber configuration, delivering high-quality electroplating seed layers for advanced packaging and 3D integration applications.
Technical Specifications:
Pre-Processing: PreClean pretreatment module
Deposition Chambers: Ti/TiN process chamber, Cu process chamber
Chamber Base Pressure: < 5 × 10⁻⁸ Torr
Maximum Wafer Size: 8 inches
Sidewall Coverage: Ti ≥ 3%, Cu ≥ 1.5%
Process Advantages:
Integrated PreClean system ensures contamination-free interfaces prior to deposition
Dedicated Ti/TiN and Cu chambers enable barrier/seed layer processing without cross-contamination
Ultra-high vacuum base pressure minimizes residual gas incorporation
Tall chamber geometry optimizes line-of-sight delivery for high aspect ratio structures
Guaranteed sidewall coverage provides continuous, void-free seed layers
Primary Applications:
High-quality electroplating seed layer deposition for high aspect ratio deep vias in TSV, advanced packaging, 3D IC integration, and MEMS applications
Why Choose Our Service？
Partner with us for deep via metallization solutions that deliver exceptional sidewall coverage, ultra-clean processing, and dedicated Ti/TiN and Cu capabilities. Using the SPTS sigma system, we provide reliable barrier and seed layer deposition, high aspect ratio coverage, and expert support—helping you achieve void-free TSV filling and robust interconnect formation with metallization solutions tailored to your most demanding 3D integration and advanced packaging requirements.
