Hall Effect Measurement System | Lake Shore M91
Capabilities:
Our advanced Hall effect measurement system characterizes critical electrical parameters of semiconductor materials including doping type, carrier concentration, and mobility. Designed for compound semiconductor epitaxy, university research, and production monitoring applications.
Technical Specifications:
Measurement Function: I-V curve measurement capability
Test Temperatures: 77 K, 300 K
Maximum Sample Size: 25 mm × 25 mm
Mobility Measurement Range: 10⁻³ – 10⁶ cm²/Vs
Carrier Concentration Measurement Range: 8 × 10² – 8 × 10²³ cm⁻³
Compatible Materials: Ge, Si, GaAs, InP, and other III-V compound epitaxial materials
Process Advantages:
Integrated I-V curve measurement enables comprehensive device characterization
Dual-temperature capability (77 K and 300 K) supports temperature-dependent analysis
Ultra-wide mobility range accommodates insulating to high-conductivity materials
Exceptional carrier concentration range covers intrinsic to heavily doped semiconductors
Broad material compatibility addresses diverse epitaxial and bulk wafer requirements
Primary Applications:
Measurement of doping type, carrier concentration, and mobility for semiconductor materials including Ge, Si, GaAs, InP, and other III-V compound epitaxial layers in research, development, and production environments
Why Choose Our Service?
Partner with us for precision Hall effect measurements that deliver accurate carrier concentration, mobility, and I-V characterization across a wide range of semiconductor materials. Using the Lake Shore M91 system, we provide reliable data and expert support—helping you optimize epitaxial growth and device performance with solutions tailored to your specific needs.
