
| Czochralski | Float Zone | Float Zone | |
| Diameter | 100-150 mm | 50-150 mm* | 100-150 mm* |
| Crystal orientation | <100> <111> | <100> <111> | <100> <111> |
| Orientation accuracy | <0.5° | <0.5° | <0.5° |
| Type and dopant | Undoped, n-type, p-type |
Undoped, n-type, p-type |
Undoped, n-type, p-type |
| Dopant | As, B, P, and Sb | P, B | P, B |
| Bulk resistivity | 0.001-60 | 1-30,000 | 1-30,000 |
| Bulk lifetime | >20 µs | >1,000 µs | >1,000 µs |
| Wafer thickness | 200-1,500 µm | 200-1,500 µm | 200-1,500 µm |
| Wafer thickness tolerance |
±15 µm | ±15 µm | ±5 µm |
| TTV | <5 µm or <9 µm | <5 µm or <9 µm | <2.5 µm |
| TIR | <3 µm | <3 µm | <1 µm |
| Wafer surface finish | Single side polished, Double side polished |
Single side polished |
Double side polished |