CMOS Fabrication: Threshold voltage tuning for transistors (NMOS/PMOS)
Well/Channel Engineering: Retrograde wells for leakage suppression
Source-Drain Formation: Ultra-shallow junctions (<10nm) for FinFETs/GAA transistors
Silicon-On-Insulator (SOI): Buried layer doping for RF/wireless chips
Non-Volatile Memory: Charge trap layer modification in 3D NAND
Solar/Power Devices: Lifetime control in IGBTs and SiC MOSFETs
Sensor/MEMS: Piezoresistive layer optimization
| Process Capability: High-Performance Implantation Solutions | |
| Category | Capabilities |
| Dopant Species | B⁺, P⁺⁺, As⁺, Sb⁺, In⁺, BF₂⁺, O⁺, N⁺, F⁺, Ar⁺, Mg⁺, Si⁺, Ge⁺, H⁺ |
| Energy Range | 0.5 keV to 1.5 MeV |
| Dose Control | 1E10 to 1E18 ions/cm² (±1% uniformity) |
| Angle Accuracy | ±0.1° control (0–60° tilt) with twist rotation |
| Wafer Handling | 150mm (6"), 200mm (8") wafers; cassette-to-cassette automation |
Ultra-Low Energy (ULE) Implant: ≤500eV for sub-7nm junctions
High-Temperature Implant: Up to 600°C for crystal damage mitigation
Co-Implantation: Species pairing (e.g., C⁺+B⁺) to suppress diffusion
PLAD™ (Plasma Doping): Conformal doping for 3D structures
RTA Annealing: Spike/RTP activation (800–1100°C) with ambient control
